Coherent light generators – Particular active media – Semiconductor
Patent
1992-03-12
1993-10-12
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 50, 372108, 372 49, H01S 319
Patent
active
052532631
ABSTRACT:
A surface-emitting semiconductor injection laser for use in fabricating high-power two-dimensional monolithic laser arrays. The surface-emitting semiconductor laser includes a substrate and an active layer and a pair of cladding layers formed on the substrate. A folded resonator cavity is formed by highly-reflective 45.degree. and 90.degree. micromirrors that are etched at either end of the active layer and by a partially-reflective reflector that is positioned between the 45.degree. micromirror and the substrate for outcoupling the laser light from the resonator cavity. The semiconductor laser is mounted junction down on a heat sink to position the active layer close to the heat sink for good heat dissipation at high power levels. In one preferred embodiment of the present invention, the substrate is optically opaque and an opening is etched in the substrate for outcoupling the laser light. In another preferred embodiment of the invention, the substrate is optically transparent and a microlens is formed on the substrate to collimate the laser light.
REFERENCES:
patent: 4633476 (1986-12-01), Scifres et al.
patent: 4665527 (1987-05-01), Akiba et al.
patent: 4760578 (1988-07-01), Oshima et al.
patent: 4819243 (1989-04-01), Opschoor
patent: 4881236 (1989-11-01), Brueck et al.
patent: 4894840 (1990-01-01), Liau et al.
patent: 4901327 (1990-02-01), Bradley
patent: 5038356 (1991-08-01), Butez et al.
patent: 5159603 (1992-10-01), Kim
Jansen Michael
Ou Szutsun S.
Roth Thomas J.
Yang Jane J.
Epps Georgia Y.
Goldstein Sol L.
Steinberger James M.
TRW Inc.
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