High power solid state switch

Details High power solid state switch High power solid state switch

1980-07-31

1983-06-21

Davie, James W.

357 15, 357 41, 357 51, H01L 2948, H01L 2980, H01L 2702

Patent

active

043896600

ABSTRACT:
Disclosed is an integrated dual gate switch which is fabricated on a semi-insulating GaAs substrate. A metallic input line is deposited on the substrate and coupled to an ion implanted n-type region in the substrate through a first ohmic contact. A metallic output line is spaced from the input line and coupled through a second ohmic contact to the n-type region. A first metallic gate is deposited on the substrate between the input and output lines, while a second metallic gate is deposited between the first gate and the output line. A first capacitive coupling between the input line and the first gate includes a first metallic conductor deposited on the substrate and overlapping portions of the input line and first gate, and a first dielectric layer between the first gate and the first conductor. A similar second capacitive coupling between the output line and the second gate includes a second metallic conductor and a second dielectric layer.

REFERENCES:
patent: 3325654 (1967-06-01), Mrazek
patent: 3621347 (1971-11-01), Van Nielen
patent: 3649885 (1972-03-01), Nienhuis
patent: 3825771 (1974-07-01), Boll
patent: 4048646 (1977-09-01), Ogawa et al.
patent: 4148046 (1979-04-01), Hendrickson et al.
patent: 4152714 (1979-05-01), Hendrickson et al.
patent: 4291326 (1981-09-01), Higuchi et al.

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