High power solid state R.F. amplifier

Amplifiers – With semiconductor amplifying device – Including class d amplifier

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330269, 330276, 330277, 330295, H03F 3193

Patent

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054205379

ABSTRACT:
Although known because of high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs of the type having coplanar leads having inductances on the order of between 8 nH and 15 nH are used in an RF amplifier. The individual devices operate on a high impedance load line to render the high inductance insignificant. The circuit configuration presents a high impedance to the output, eliminating the need for expensive combiners and low inductance packaging.

REFERENCES:
patent: 4733194 (1988-03-01), Ruehrs et al.
patent: 5049836 (1991-09-01), Christie et al.
patent: 5187580 (1993-02-01), Porter, Jr. et al.
Ikeda, "Development of a Solid State Radio Transmitter with MOS/FET", IEEE Transactions on Broadcasting, vol. BC-26, No. 4, Dec. 1980, pp. 99-112.

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