High power single spatial mode semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 19, 372 46, 372 50, 372 49, H01S 319

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active

046897976

ABSTRACT:
A high power single spatial mode semiconductor laser provides strong lateral index guiding to maintain single transverse mode output and yet has a large cavity area. The large cavity area provides low series resistance, low thermal resistance, and lower operating current densities and photon densities than can be achieved by conventional cavity designs. The result is a laser which can operate at high output power at a single transverse mode. In the plane of the p-n junction, the active layer has a cross-section including a waveguide section of width between 1-2 microns which provides lateral mode stability and discrimination against high order transverse modes with a directly adjacent amplifier section consisting of a layer of about 5-20 microns width and several hundred microns in length. Due to the large cross section area of the amplifier section, the majority of the current flows through the amplifier section where most of the heat is generated. The device has only a few ohms series resistance and significantly lower thermal impedances than conventional narrow cavity design.

REFERENCES:
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Burnham et al., "Integrated Reflecting Polarizers in BH Diode Lasers", Xerox Disclosure Journal, vol. 4, No. 3, May/Jun. 1979, pp. 345-346.
Ikegami et al., "Planar Stripe with Waist/Notch (SWAN) Injection Laser", Electronics Letters, vol. 14, No. 24, Nov. 23, 1978, pp. 753-754.

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