High power silicon carbide and silicon semiconductor device...

Details High power silicon carbide and silicon semiconductor device... High power silicon carbide and silicon semiconductor device...

2005-05-31

2005-05-31

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S678000

Reexamination Certificate

active

06900537

ABSTRACT:
A silicon carbide semiconductor field effect transistor and a silicon metal oxide semiconductor field effect transistor are packaged as a hybrid field effect transistor having a high voltage resistance provided by the silicon carbide device and a low switch-on resistance provided by the silicon device. The two devices are co-packaged electrode-on-electrode. A die-on-die configuration reduces the footprint of the hybrid device, and a side-by-side configuration provides an increased area for thermal management of the hybrid device.

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Werner Tursky, “Devices and their Packaging Technology,” pp. 1-6, IEEE-4th Workshop Future of Electronic Power Processing and Conversion, May 27-29, 2001, Salina, Italy.

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