High power semiconductor module device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode

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257177, 257687, 257704, 257717, 257784, 257786, H01L 2349, H01L 2316

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active

060876824

ABSTRACT:
High power semiconductor module device constituted in such a manner that a circuit board to which semiconductor pellets are bonded is bonded onto a heat sink, and an electrically insulating case with elasticity which has a tubular portion surrounding the sides of the circuit board is mounted on the heat sink, wherein there is provided a push member which is composed of an electrically insulating material and pushes the respective pellet wholly or partially from above with a predetermined pressure. By thus pushing the pellet by means of the push member, the destruction of the module device due to the thermal fatigue of the bonded portions of the circuit board and the pellets, the bonded portion of the circuit board and heat sink, and the bonded portions of the bonding wires is prevented even when the temperature of the whole module is repeatedly raised and lowered by the repetition of heating and cooling during the operation of the pellets.

REFERENCES:
patent: 5019892 (1991-05-01), Grabbe
patent: 5296739 (1994-03-01), Heilbronner et al.
patent: 5389819 (1995-02-01), Matsuoka
patent: 5789804 (1998-08-01), Matsuoka et al.
patent: 5808868 (1998-09-01), Drekmeier
S. Seinecke, "High-Performance MCMs for Mainframe Computers", Proceedings on Computer Systems and Software Engineering (Comp Euro), IEEE, May 4, 1992, pp. 310-315.
IBM Technical Disclosure Bulletin, "Advanced Indirect Cooling Using Square Pistons", Jan. 1995, vol. 38, No. 01, pp. 59-60.
Y. Nakatsuka, et al. "Development of Fine Pitch and High Lead Count Ceramic QFP," Proceedings of the Electronics Manufacturing Technology Symposium, San Francisco, IEEE/CHMT, Sep. 16, 1991, p. 175-80.
"3D Multi-Layered Package with Heat Sink," Research Disclosure No. 337, May 1992.

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