High-power semiconductor module

Details High-power semiconductor module High-power semiconductor module

1996-07-09

1998-09-22

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

257724, 257725, H01L 2334

Patent

active

058118780

ABSTRACT:
In a high-power semiconductor module (10), in which a plurality of first submodules (13, 14, 16, 17) are arranged in an electrically insulated manner in a common housing (12) and on a common cold plate (11) and are interconnected with one another, the first submodules (13, 14, 16, 17) short-circuit-proof operation in conjunction with relatively high switching frequencies is made possible, with a relatively low current-carrying capacity and an increased withstand voltage, by virtue of the fact that the first submodules (13, 14, 16, 17) are connected in series within the module for the purpose of increasing the withstand voltage.

REFERENCES:
patent: 5541453 (1996-07-01), Stockmeier et al.
"Reliable 1200 Amp 2500 V IGBT Modules for Traction Applications," T. Stockmeier, et al. pp. 1-13. IEE IGBT Apr. 25, 1995.

Affiliated with

Also associated with

Rating

High-power semiconductor module does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-power semiconductor module, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-power semiconductor module will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1625073