High power semiconductor lasers

Details High power semiconductor lasers High power semiconductor lasers

1985-12-16

1988-11-08

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 49, 372 50, 372102, H01S 319

Patent

active

047837888

ABSTRACT:
High power semiconductor lasers which operate in the fundamental lateral and transverse mode are disclosed. Fundamental transverse mode behavior is well known by virtue of using a thin active layer. Fundamental lateral mode behavior in a wide double hetero-structure laser is achieved by selectively enhancing losses in the higher order lateral modes. Alternatively, a distributed feedback structure such as a grating may be used to achieve fundamental lateral mode operation in a wide double hetero-structure semiconductor laser.

REFERENCES:
patent: 4359776 (1982-11-01), Acket et al.
patent: 4573163 (1986-02-01), Kaminow
D. Botez, "Laser Diodes are Powered-Packed," IEEE Spectrum, Jun. 1985, pp. 43-53.

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