High power semiconductor laser with a large optical...

Details High power semiconductor laser with a large optical... High power semiconductor laser with a large optical...

2006-08-01

2006-08-01

Vo, Tuyet (Department: 2821)

Coherent light generators

Particular active media

Semiconductor

C372S045011, C372S045012

Reexamination Certificate

active

07085299

ABSTRACT:
The invention relates to high power semiconductor diode lasers of the type commonly used in opto-electronics, mostly as so-called pump lasers for fiber amplifiers in the field of optical communication, e.g. for an erbium-doped fiber amplifier (EDFA) or a Raman amplifier. Such a laser, having a single cavity and working in single transverse mode, is improved by placing a multilayer large optical superlattice structure (LOSL) into at least one of the provided cladding layers. This LOSL provides for a significantly improved shape of the exit beam allowing an efficient high power coupling into the fiber of an opto-electronic network.

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GB Search Report dated Sep. 8, 2003 for corresponding GB Application No. GB0306279.1.
U.S. Appl. No. 11/001,736 filed Dec. 2, 2004.

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