High power semiconductor laser diode and method for making...

Coherent light generators – Particular beam control device – Mode discrimination

Reexamination Certificate

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C372S009000, C372S043010, C372S045013, C372S054000

Reexamination Certificate

active

06862300

ABSTRACT:
Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting in a way of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. Essentially, the novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode. These CIG elements consist of one or a plurality of layers and must contain at least one layer which provides the optical absorption of undesired modes of the lasing wavelength and preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements may be specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.

REFERENCES:
patent: 4807235 (1989-02-01), Suyama et al.
patent: 6366595 (2002-04-01), Bowler
patent: 20020159494 (2002-10-01), Tojo et al.
patent: 5-7026488 (1982-02-01), None
patent: 0 270 170 (1987-11-01), None
patent: 5-21902 (1993-01-01), None
patent: 2003-34595 (2003-02-01), None
Pawlik et al., “Ultra-High Power RWG Lser Diodes with Lateral Absorber Region”, Sep. 29, 2002, pp. 163-164.
International Search Report regarding International Application No. PCT/IB03/03929 mailed Dec. 17, 2003.

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