High power semiconductor laser diode

Details High power semiconductor laser diode High power semiconductor laser diode

2008-01-10

2009-11-24

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular beam control device

Mode discrimination

C372S011000, C372S018000, C372S045013

Reexamination Certificate

active

07623555

ABSTRACT:
Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement concerns a method of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. This novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode, said CIG being established by fabricating CIG elements consisting of one or a plurality of layers and containing at least one layer which provides the optical absorption of undesired modes of the lasing wavelength. This CIG preferably contains an insulating layer as a first contact layer to the semiconductor. The CIG elements are manufactured by a selected sequence of processing steps, in particular several masking steps, and are specifically shaped, both in thickness and coverage of the laser's semiconductor body, to provide desired suppression characteristics. Further, the CIG elements may be combined with the contact layer usually providing the electrical input power to the laser diode.

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Pawlik et al., “Ultra-High Power RWG Laser Diodes with Lateral Absorber Region”, Sep. 29, 2002, pp. 163-164.
International Search Report regarding International Application No. PCT/IB03/03929 mailed Dec. 17, 2003.

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