High-power semiconductor laser diode

Details High-power semiconductor laser diode High-power semiconductor laser diode

1992-05-12

1993-12-21

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

052727114

ABSTRACT:
A high-power semiconductor laser diode that employs a lateral antiresonant reflecting optical waveguide for generating a single-mode laser beam having an aperture spot size on the order of 4 to 8 microns. The lateral antiresonant reflecting optical waveguide is a negative-index waveguide or antiguide that operates in an antiresonance condition for the fundamental lateral mode, but not for the higher-order lateral modes. Consequently, the fundamental lateral mode is reflected by the lateral waveguide while the higher-order lateral modes are allowed to leak out. This provides strong discrimination between the fundamental lateral mode and the higher-order lateral modes in order to generate a single-mode laser beam having a large aperture spot size. The lateral waveguide also provides good lateral mode stability due to the large negative step in the waveguide index of refraction.

REFERENCES:
patent: 4635268 (1987-01-01), Motegi et al.
patent: 4811354 (1989-03-01), Uomi et al.

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