Coherent light generators – Particular active media – Semiconductor
Patent
1997-11-21
2000-02-22
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
372 23, 372 45, 372 50, 437129, H01S 319
Patent
active
060288760
ABSTRACT:
The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output due to filaments is eliminated. This elimination is achieved by a periodically varying gain given for a resonator of the semiconductor laser device. That is, this invention changes a gain distribution which causes the generation of filaments in the resonator into different distribution. According to the present invention, there is formed an insulation layer through ion implantation to an active layer to adjust current density implanted to the active layer, thereby eliminating non-uniform distribution of the light along the longitudinal direction of the resonator.
REFERENCES:
patent: 4727557 (1988-02-01), Burnham et al.
patent: 5043291 (1991-08-01), Devoldere et al.
patent: 5160492 (1992-11-01), Wang et al.
patent: 5193098 (1993-03-01), Welch et al.
patent: 5504768 (1996-04-01), Park et al.
James Guthrie et al., "Beam Instability in 980-nm Power Lasers: Experiment and Analysis", IEEE Photonics Technology Letters, vol. 6, No. 12, Dec. 1994, pp. 1409-1411.
Cho Ho Sung
Jang Dong Hoon
Lee Jung Kee
Park Chul Soon
Park Kyung Hyun
Bovernick Rodney
Electronics and Telecommunications Research Institute
Kim Sung T.
Korea & Telecom
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