High power semiconductor laser device

Details High power semiconductor laser device High power semiconductor laser device

2007-02-22

2008-12-16

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046010

Reexamination Certificate

active

07466737

ABSTRACT:
In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.

REFERENCES:
patent: 5818860 (1998-10-01), Garbuzov et al.
patent: 6798808 (2004-09-01), Konushi et al.
patent: 2007/0183470 (2007-08-01), Nakabayashi
patent: 2008/0008220 (2008-01-01), Ueda et al.
patent: 2000-286507 (2000-10-01), None
Korean Office Action with English translation issued in corresponding Korean Patent Application No. KR 10-2006-0017419, mailed on Mar. 26, 2007.

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