High power semiconductor laser

Details High power semiconductor laser High power semiconductor laser

1987-12-22

1990-07-17

Gonzalez, Frank

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

049425854

ABSTRACT:
A heterostructure semiconductor laser provides high power by having a wide output facet so that the power density at the output facet is low enough to avoid catastrophic optical mirror damage. Single transverse mode oscillation occurs in the center of a pumped trapezoidal gain medium layer between the wide output facet and a relatively narrower mirror facet. Stimulated emission of radiation in the balance of the pumped trapezoidal area produces high power output. At the opposite end of the gain layer from the output facet, a parallel edged, index guided pumped region of the gain layer provides a single transverse mode wave guide for assuring single mode output. Preferably the narrower facet has a higher reflectivity than the wider facet, and a non-absorbing window is provided at the wider facet, for lowest lasing threshold and highest power output.

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patent: 4523316 (1985-06-01), Botez
patent: 4523317 (1985-06-01), Botez
patent: 4545057 (1985-10-01), Hayakawa et al.
patent: 4546481 (1985-10-01), Yamamoto et al .
patent: 4581742 (1986-04-01), Botez
patent: 4594718 (1986-06-01), Scifres et al.
patent: 4689797 (1987-08-01), Olshansky
patent: 4713821 (1987-12-01), Bradford et al.

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