High power semiconductor device to output light with...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S068000

Reexamination Certificate

active

07843982

ABSTRACT:
A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.

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