High power semiconductor device module with low thermal resistan

Details High power semiconductor device module with low thermal resistan High power semiconductor device module with low thermal resistan

1993-09-15

1995-04-18

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257694, 257698, 257724, H01L 2348, H01L 2940

Patent

active

054081289

ABSTRACT:
A high power semiconductor module has an IMS substrate which carries the semiconductor die to be interconnected within the housing. A terminal board carries the terminals for connection to the substrate with a snap connection, with the terminals positioned above respective solder pads on the IMS board. Integral breakaway pins on the terminal board position the board relative to the IMS during soldering. A central opening in the terminal board allows the loading of a soft silicone into the space between the IMS substrate and bottom of the terminal board. The terminal board has bosses extending upwardly over its top surface adjacent each power terminal, and the bottom of a top housing assembly has ribs which enclose the bosses on the top of the terminal board. A silicone glue is poured onto the top of the terminal board and into the spaces between and around the bosses. The ribs project into this glue to provide a good insulation seal around the power terminals projecting through the terminal board.

REFERENCES:
patent: 4510677 (1985-04-01), Collumeau
patent: 5105259 (1992-04-01), McShane et al.
patent: 5291065 (1994-03-01), Arai et al.

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