Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2005-07-12
2005-07-12
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
Reexamination Certificate
active
06917091
ABSTRACT:
A high power semiconductor device including gate electrodes also includes an active region of an approximately rectangular shape, located on a semiconductor substrate; a drain electrode located on the active region; and first and second source electrodes which are disposed on opposite sides to the drain electrode so that the first and second source electrodes face each other across at least some of the gate electrodes. The directions of currents carried by the first and second source electrodes are opposite to each other.
REFERENCES:
patent: 4931844 (1990-06-01), Zommer
patent: 5742091 (1998-04-01), Hebert
patent: 5844299 (1998-12-01), Merrill et al.
patent: 5883407 (1999-03-01), Kunii et al.
patent: 6046641 (2000-04-01), Chawla et al.
patent: 6180995 (2001-01-01), Hebert
patent: 6221727 (2001-04-01), Chan et al.
patent: 6303950 (2001-10-01), Kurusu et al.
patent: 6307247 (2001-10-01), Davies
patent: 6661068 (2003-12-01), Durham et al.
patent: 2003/0146490 (2003-08-01), Averett et al.
Ito et al, “Performance Improvement in Larger RF LDMOSFET Power Amplifiers”.
Gotou Seiki
Inoue Akira
Abraham Fetsum
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
High power semiconductor device having source electrodes... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High power semiconductor device having source electrodes..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power semiconductor device having source electrodes... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3398921