High-power semiconductor device

Details High-power semiconductor device High-power semiconductor device

1990-12-05

1992-05-19

James, Andrew J.

357 80, 357 85, H01L 2316, H01L 3902, H01L 4900

Patent

active

051153009

ABSTRACT:
A high-power semiconductor device comprises a overcurrent detecting terminal. One of conductive layers selectively adhered to a substrate of the semiconductor device is thinner than the other conductive layers. One of terminals for an electrode of the semiconductor element of the high-power semiconductor device is connected to one end of the thinner conductive layer. The overcurrent detecting terminal is electrically connected to said electrode, and to the other end of the thinner conductive layer. A potential difference between the terminal and the overcurrent detecting terminal is measured, in order to detect a current, to prevent an overcurrent from flowing through the semiconductor element.

REFERENCES:
patent: 4818895 (1989-04-01), Kaufman

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