High-power semiconductor assembly in disk-cell configuration

Details High-power semiconductor assembly in disk-cell configuration High-power semiconductor assembly in disk-cell configuration

1976-12-16

1979-02-20

James, Andrew J.

357 74, 357 81, H01L 2342, H01L 2344, H01L 2346

Patent

active

041410300

ABSTRACT:
A high-power semiconductor assembly of the disk-cell construction has an insulating housing and exhibits electrical and thermal pressure-contacting of the semiconductor chip. At least two zones of different conduction types are provided within the chip and the same is clamped, in an essentially doubly symmetrical arrangement with respect to the mid-plane of the chip and the central axis perpendicular thereto, with the interposition of pressure plates, heat-conducting paste, and electrodes, particularly cup-shaped electrodes with their open sides disposed away from the main surfaces of the semiconductor chip, and between two terminal electrodes serving as heat sinks.

REFERENCES:
patent: 3293508 (1966-12-01), Boyer
patent: 3581163 (1971-05-01), Eriksson
patent: 3597524 (1971-08-01), Schreiner
patent: 3800192 (1974-03-01), Eisele et al.
patent: 3852803 (1974-12-01), Walmet et al.
patent: 3885243 (1975-05-01), Weisshaar

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