High power RF transistor assembly

Details High power RF transistor assembly High power RF transistor assembly

1986-01-21

1987-01-27

Larkins, William D.

357 74, 357 80, 357 81, H01L 2504, H01L 2314, H01L 2302, H01L 2306

Patent

active

046397604

ABSTRACT:
An improved high frequency high power transistor assembly capable of delivering 600 watts or more at 100 MHz and higher without the need for water cooling is described. Four transistor die individually mounted on separate BeO ceramic isolators are installed in a recessed cavity in a copper base. The BeO isolators have metallized top surfaces which connect to the backside output contacts of the transistor die and extend toward the centerline of the cavity. They connect to a longitudally arranged input-output assembly centrally located over the center line of the cavity. The input-output assembly has a wrap-around electrode structure which brings the transistor output connections to the upper surface of the assembly for easy bonding to the output leads. The input to the individual die is via individual ballast resistors mounted on the input-output assembly, one per transistor, to provide transistor-to-transistor matching for more uniform current distribution.

REFERENCES:
patent: 4038677 (1977-07-01), Nagel et al.
patent: 4408219 (1983-10-01), Resneau et al.
patent: 4518982 (1985-05-01), Du Bois et al.

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