Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1991-08-01
1993-11-16
Sotomayor, John B.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257190, 257 14, 257 18, H01L 2980, H01L 2702
Patent
active
052626601
ABSTRACT:
A high power pseudomorphic (PM) AlGaAs/InGaAs high electron mobility transistor (HEMT) (26) with improved gain at 94 GHz. The transistor (26) includes an InGaAs quantum well (32) having a silicon planar doping layer (34) located at the bottom. A donor layer (36) comprises AlGaAs with a silicon planar doping layer (37). The resulting transistor (26) exhibits superior gain and noise characteristics that relatively high power levels when operating at 94 GHz. The transistor (26) is produced using an optimized growth process which involves growing the quantum well at a relatively low temperature and then raising the temperature to grow subsequent layers.
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Liu Po-Hsin
Streit Dwight C.
Tan Kin L.
Sotomayor John B.
Taylor Ronald L.
TRW Inc.
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