Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1997-11-03
1999-12-07
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257187, 257275, 330277, H01L 2980
Patent
active
059988177
ABSTRACT:
A multicell transistor for use in a circuit has an input ground plane for an input waveguide and an output ground plane for an output waveguide. The multicell transistor includes a gate electrode coupled to the input waveguide, a drain electrode coupled to the output waveguide, and a source electrode coupled to the input ground plane. An output ground strap spaced from the drain electrode couples the output ground plane to the source electrode. A pair of transmission lines are orthogonally connected to and extend from the gate electrode to form a pair of inductors for matching the impedances of the gate electrode and the input waveguide.
REFERENCES:
patent: 4034399 (1977-07-01), Drukier et al.
patent: 4587541 (1986-05-01), Dalman et al.
patent: 5546049 (1996-08-01), Wen et al.
patent: 5760650 (1998-06-01), Faulkner et al.
Chu Peter
Cole Michael R.
Hou Liping D.
Wang Robert F.
Wen Cheng P.
Alkov Leonard A.
Lenzen, Jr. Glenn H.
Martin-Wallace Valencia
Raytheon Company
Schubert William C.
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