High power photoconductor bulk GaAs switch

Details High power photoconductor bulk GaAs switch High power photoconductor bulk GaAs switch

1990-06-04

1991-07-02

Mintel, William

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 19, 357 17, 250211R, H01L 2714

Patent

active

050289713

ABSTRACT:
A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power supply and a laser that introduces laser light via fiber optic bundles to the substrate and parallel to the applied electric field.

REFERENCES:
patent: 3053926 (1962-09-01), Ben-Sira et al.
patent: 3529161 (1970-09-01), Oosthoek et al.
patent: 4633286 (1986-12-01), Bovino
patent: 4695733 (1987-09-01), Pesavento
patent: 4864119 (1989-09-01), Ragle et al.
Kim et al, "High Power RF Generation With Optically Activated Bulk GaAs Dces," 1988 IEEE MTT-S Digest, pp. 1071-1074.
Kim et al, "Bulk GaAs Photonic Devices With Two Opposite Electrodes," Jun. 1989, IEEE Pulsed Power Conference, IEEE Catalog No. 89CH2678-2, pp. 430-432.

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