Patent
1983-03-03
1987-02-10
Edlow, Martin H.
H01L 2978
Patent
active
046426663
ABSTRACT:
A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.
REFERENCES:
patent: 3461360 (1969-08-01), Barson
patent: 4001860 (1977-01-01), Cauge
patent: 4072975 (1978-02-01), Ishitani
Herman Thomas
Lidow Alexander
Edlow Martin H.
International Rectifier Corporation
LandOfFree
High power MOSFET with low on-resistance and high breakdown volt does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High power MOSFET with low on-resistance and high breakdown volt, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power MOSFET with low on-resistance and high breakdown volt will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2365736