High power MOSFET with low on-resistance and high breakdown volt

Details High power MOSFET with low on-resistance and high breakdown volt High power MOSFET with low on-resistance and high breakdown volt

1981-02-09

1983-03-08

Clawson Jr., Joseph E.

357 13, 357 20, 357 41, 357 59, 357 68, 357 91, H01L 2978

Patent

active

043762867

ABSTRACT:
A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without affecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.

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