Fishing – trapping – and vermin destroying
Patent
1983-01-10
1987-11-10
Saba, William G.
Fishing, trapping, and vermin destroying
357 20, 357 234, 357 41, 357 52, 357 89, 437 30, 437 41, 437149, 437150, 437153, 437913, 437931, 437958, 437984, H01L 21265, H01L 2131
Patent
active
047057599
ABSTRACT:
A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.
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Lin et al., "Optimum Load Device for DMOS Integrated Circuits", IEEE J. Solid-State Circuits, vol. SC-11, No. 4, Aug. 1976, pp. 443-452.
Plummer et al., "Monolithic 200-V CMOS Analog Switch, IEEE J. Solid-State Circuits, vol. SC-11, No. 6, Dec. 1976, pp. 809-817.
Sun et al., "Modeling of--LDMOS, VDMOS and VMOS--Transistors", IEEE Trans. Electron Dev., vol. 60-27, No. 2, Feb. 1980, pp. 356-367.
Herman Thomas
Lidow Alexander
International Rectifier Corporation
Saba William G.
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