High power MOSFET with low on-resistance and high breakdown volt

Details High power MOSFET with low on-resistance and high breakdown volt High power MOSFET with low on-resistance and high breakdown volt

1989-06-22

1990-09-25

Hille, Rolf

357 238, 357 234, 357 41, 357 43, H01L 2968, H01L 2910, H01L 2702

Patent

active

049596993

ABSTRACT:
A high power MOSFET is disclosed in which two laterally spaced sources each supply current through respective channels in one surface of a semiconductor chip which are controlled by the same gate. The channels lead from the source electrodes to a relatively low resistivity region and from there to a relatively high resistivity epitaxially formed region which is deposited on a high conductivity substrate. The drain electrode may be either on the opposite surface of the chip or laterally displaced from and on the same side as the source regions. The epitaxially deposited semiconductor material immediately adjacent and beneath the gate and in the path from the sources to the drain has a relatively high conductivity, thereby to substantially reduce the on-resistance of the device without effecting the breakdown voltage of the device. The breakdown voltage of the device is substantially increased by forming a relatively deep p-type diffusion with a large radius in the n-type epitaxial layer beneath each of the sources.

REFERENCES:
patent: 3271640 (1966-09-01), Moore
patent: 3319311 (1967-05-01), Mutter
patent: 3458781 (1969-07-01), Simon
patent: 3461360 (1969-08-01), Barson et al.
patent: 3619740 (1971-11-01), Nakanuma et al.
patent: 3764396 (1973-10-01), Tarui et al.
patent: 3786319 (1974-01-01), Tomisaburo
patent: 3821776 (1974-06-01), Hayashi et al.
patent: 3845495 (1974-10-01), Cauge et al.
patent: 3849216 (1974-11-01), Salters
patent: 3909320 (1975-09-01), Gauge et al.
patent: 3950777 (1976-04-01), Tarui et al.
patent: 3986903 (1976-10-01), Watrous, Jr.
patent: 4001860 (1977-01-01), Cauge et al.
patent: 4015278 (1977-03-01), Fukuta
patent: 4055884 (1977-11-01), Jambotkar
patent: 4070690 (1978-01-01), Wickstrom
patent: 4072975 (1978-02-01), Ishitani
patent: 4101922 (1978-07-01), Tihanyi et al.
patent: 4142197 (1979-02-01), Dingwall
patent: 4145700 (1979-03-01), Jambotkar
patent: 4148047 (1979-04-01), Hendrickson
patent: 4173022 (1979-10-01), Dingwall
patent: 4190850 (1980-02-01), Tihanyi et al.
patent: 4233615 (1980-11-01), Takemoto et al.
patent: 4344081 (1982-08-01), Pao et al.
patent: 4345265 (1982-08-01), Blanchard
patent: 4593302 (1986-06-01), Lidow et al.
I. Yoshida et al., "A High Power MOSFET with a Vertical Drain Electrode and a Meshed Gate Structure," IEEE Journal of Solid-State Circuits, vol. SC-11 #4, Aug. 1976, pp. 472-477.
J. Plummer et al., "A Monolithic 200-V CMOS Analog Switch," IEEE Journal of Solid-State Circuits, vol. SC-11 #6, Dec. 1976, pp. 809-817.
B. Scharf et al., "A MOS-Controlled Triac Device," 1978 IEEE International Solid-State Circuits Conference, San Francisco, Calif., Feb. 15-17, 1978, pp. 222-223.
K. Lisiak et al., "Optimization of Non-Planar Power MOS Transistors," IEEE Transactions on Electron Devices, vol. Ed-25 #10, Oct. 1978, pp. 1229-1234.
H. Sigg et al., "D-MOS Transistor for Microwave Applications," IEEE Transactions on Electron Devices, vol. ED-19 #1, Jan. 1972, pp. 45-53.
R. Cady et al., "Integration Technique for Closed Field-Effect Transistors," IBM Technical Disclosure Bulletin, vol. 16 #11, Apr. 1974, pp. 3519-3520.
H. Lin et al., "Optimum Load Device for DMOS Integrated Circuits," IEEE Journal of Solid-State Circuits, vol. SC-11 #4, Aug. 1976, pp. 443-452.
H. Collins et al., "New Technology-HEXFET, a New Power Technology, Cuts On-Resistance, Boosts Ratings", Electronic Design, Jun. 7, 1979, 8 pages.
S. C. Sun et al., "Modeling of the On-Resistance of LDMOS, VDMOS, and VMOS Power Transistors", IEEE Transactions on Electronic Devices, vol. ED-27, No. 2, Feb. 1980, pp. 356-367.

Affiliated with

Also associated with

Rating

High power MOSFET with low on-resistance and high breakdown volt does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High power MOSFET with low on-resistance and high breakdown volt, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power MOSFET with low on-resistance and high breakdown volt will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-331884