High power MOSFET with direct connection from connection pads to

Details High power MOSFET with direct connection from connection pads to High power MOSFET with direct connection from connection pads to

1983-03-21

1988-12-06

Clawson, Jr., Joseph E.

357 43, 357 48, 357 55, 357 68, H21L 2478

Patent

active

047898828

ABSTRACT:
The gate electrode pad and the source electrode pad of a high power MOSFET are supported atop an oxide layer. The peripheral regions of the source electrode which surround the areas of the gate and source pads are connected at a plurality of points around their peripheries through the oxide layer to the underlying silicon. This enables rapid collection of minority carriers which were weakly injected into the region surrounding the pads when a junction beneath the pads is forward-biased.

REFERENCES:
patent: 3271201 (1966-09-01), Pomerantz
patent: 3812521 (1974-05-01), Davis et al.
patent: 4143387 (1979-03-01), Stikvoort
Hexfet Databook, .COPYRGT.1981, International Rectifier Corp., pp. 1,6,7,96,97.

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