High power MOS transistor

Details High power MOS transistor High power MOS transistor

1996-07-26

1999-09-14

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Parallel controlled paths

327427, 327430, 327433, H03K 1762, H03K 17693, H03K 1776

Patent

active

059528699

ABSTRACT:
A high power MOS transistor consists of a large number of sub-transistors (T1 to T6) connected in parallel. The gate electrodes of the sub-transistors (T1 to T6) can be driven individually via controllable switching elements (SW1 to SW6; SQ1 to SQ5).

REFERENCES:
patent: 4635084 (1987-01-01), Benjamin et al.
patent: 4977341 (1990-12-01), Stein
patent: 5216289 (1993-06-01), Hahn et al.
patent: 5422588 (1995-06-01), Wynne
patent: 5436578 (1995-07-01), Brown et al.
patent: 5552744 (1996-09-01), Burlison et al.

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