High power monolithic microwave integrated circuit package

Details High power monolithic microwave integrated circuit package High power monolithic microwave integrated circuit package

2001-11-27

2002-11-19

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S717000, C257S728000, C257S712000, C257S705000

Reexamination Certificate

active

06483186

ABSTRACT:

CROSS-REFERENCE TO RELATED APPLICATION
This application claims the priority benefit of Taiwan application serial no. 90122432, filed Sep. 11, 2001.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a monolithic microwave integrated circuit (MMIC) package. More specifically, the present invention relates to a flip chip type MMIC package.
2. Description of the Related Art
Currently, the operational frequency of a common micro/millimeter wave integrated circuit is from about 3-30 GHz to 30-300 GHz. The functions and applications of the microwave/millimeter wave integrated circuit are limited to the package thereof. Therefore, to succeed in the MMIC market, a MMIC package having a high operational frequency, low parasitic capacitance and parasitic conductance, superior heat dissipation performance, compact body, low production cost, and an ability to mass production is required.
FIG. 1
is a schematic cross-sectional view of a conventional MMIC package. The package shown in
FIG. 1
is a small outline integrated circuit (SOIC) package that is most widely used. The chip
104
is attached to a die region
106
of a leadframe
102
by surface mounting. A bonding wire
108
is used to electrically connect the chip
104
to the leadframe
102
. A sealing material
110
covers and fixes the wire
108
, the chip
104
and, a portion of the leadframe
106
. A package is formed after molding with a capsulatant
112
, which protects the electric properties from being deteriorated by moisture, dusts, or the like in the atmosphere. However, the leadframe may generate serious parasitic capacitance and parasitic conductance effects.
An approach to solve the above problem has been proposed. As shown in
FIG. 2
, a schematic cross-sectional view of another conventional MMIC package with an insulation substrate used as a carrier for a MMIC die
204
of a MMIC package
200
. The insulation substrate has an upper surface and a lower surface. The upper surface and the lower surface are provided with a plurality of contacts
202
a
and
202
b,
respectively. The contact
202
a
and the contact
202
b
are electrically connected through a via hole
202
c.
After the MMIC die
204
is attached to the insulation substrate
202
, a bonding wire
206
is used to electrically connect the contact
203
on the MMIC die
204
to the contact
202
a
on the insulation substrate. Finally, the sealing material
208
covers and fixes the MMIC die
204
and the bonding wire
206
. A package is formed after molding with a capsulatant
210
.
In the prior, the bonding wire may result in parasitic capacitance and parasitic conductance effects, which causes impedance and self-oscillation.
SUMMARY OF THE INVENTION
It is one object of the present invention to provide a MMIC package, which reduces the parasitic capacitance and the parasitic conductance.
It is another object of the present invention to provide a MMIC package, which has a heat sink bonded to an active region of the MMIC die to effectively dissipate heat.
It is still another object of the present invention to provide a MMIC package in which the electric connection between the chip and the insulation substrate is achieved by the flip chip technology instead of the wire bonding technology, resulting in a reduced package size.
It is still another object of the present invention to provide a MMIC package, which is applicable to the surface mount technology and is able to put into mass production.
In order to accomplish the above and other objects of the present invention, a monolithic microwave integrated circuit (MMIC) package comprising a MMIC die, a heat sink, an insulation substrate, and a sealing material is provided. The MMIC die has an active region and a peripheral region. The heat sink is located in the active region of the MMIC die. A plurality of bonding pads are located in the peripheral region. The insulation substrate has an opening and a plurality of transit ports. The opening is used to contain the heat sink, and the transit ports are electrically connected to the bonding pads. The sealing material is filled between the insulation substrate and the MMIC die to cover the whole MMIC die so that the MMIC die is fixed to the insulation substrate and is protected.
The transit ports of the insulation substrate are electrically connected to the bonding pads on the MMIC die by bumps. These bumps can be formed on the bonding pads of the MMIC die or on the transit port of the insulation substrate.
The heat sink that is used for the present invention is slightly smaller than the opening.
In one aspect of the present invention, the transit port of the insulation substrate further comprises a first contact, a second contact, and a via hole. The first contact is located on the upper surface of the insulation substrate. The second contact is located on he lower surface of the insulation substrate. The via hole is located in the insulation substrate and is used to electrically connect the first contact to the second contact.
In another aspect of the present invention, the transit port of the insulation substrate comprises a first contact and a second contact, which are not electrically connected to each other through a via hole. The first and second contacts disconnected to each other are used as dummy contacts.
The first contact on the upper surface of the insulation substrate is electrically connected to the bonding pad of the MMIC die.
The heat sink is bonded to the active region of the MMIC die by an adhesive layer. The adhesive layer can be made of a low dielectric material or a thermally conductive compound.


REFERENCES:
patent: 5904499 (1999-05-01), Pace
patent: 6002147 (1999-12-01), Iovdalsky et al.

Affiliated with

Also associated with

Rating

High power monolithic microwave integrated circuit package does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High power monolithic microwave integrated circuit package, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power monolithic microwave integrated circuit package will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2917272