Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2002-12-06
2008-12-30
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S194000, C257SE21407, C257SE29253, C438S285000, C438S590000
Reexamination Certificate
active
07470941
ABSTRACT:
A method for fabricating heterojunction field effect transistors (HFET) and a family of HFET layer structures are presented. In the method, a step of depositing a HFET semiconductor structure onto a substrate is performed. Next, a photoresist material is deposited. Portions of the photoresist material are removed corresponding to source and drain pad pairs. A metal layer is deposited onto the structure, forming source pad and drain pad pairs. The photoresist material is removed, exposing the structure in areas other than the source and drain pad pairs. Each source and drain pad pair has a corresponding exposed area. The structure is annealed and devices are electrically isolated. The exposed area of each device is etched to form a gate recess and a gate structure is formed in the recess. Semiconductor layer structures for GaN/AlGaN HFETs are also presented.
REFERENCES:
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6258639 (2001-07-01), Rohdin et al.
patent: 6429467 (2002-08-01), Ando
patent: 6552373 (2003-04-01), Ando et al.
patent: 6624452 (2003-09-01), Yu et al.
patent: 6727531 (2004-04-01), Redwing et al.
patent: 6849864 (2005-02-01), Nagahama et al.
patent: 6989553 (2006-01-01), Yokogawa et al.
patent: 2001/0017370 (2001-08-01), Sheppard et al.
patent: 2002/0070389 (2002-06-01), Song
patent: 2002/0100412 (2002-08-01), Hirayama et al.
patent: 2002/0167023 (2002-11-01), Chavarkar et al.
patent: 2003/0121468 (2003-07-01), Boone et al.
patent: 2005/0087751 (2005-04-01), Nakamura et al.
patent: 10-294452 (1998-11-01), None
patent: 11-243251 (1999-09-01), None
patent: 11 274474 (1999-10-01), None
patent: 2000-68498 (2000-03-01), None
patent: 2000-223697 (2000-08-01), None
patent: 2001-274375 (2001-10-01), None
Antcliffe Mike
Hashimoto Paul
Hussain Tahir
Micovic Miroslav
HRL Laboratories LLC
Sefer Ahmed
Tope-McKay & Associates
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