High power, low frequency, electronically adjustable attenuator

Details High power, low frequency, electronically adjustable attenuator High power, low frequency, electronically adjustable attenuator

1981-06-09

1983-03-29

Gensler, Paul L.

Wave transmission lines and networks

Attenuators

307264, H03H 724

Patent

active

043785360

ABSTRACT:
An attenuator for high-power, low frequency RF signals including two .pi.-section low-pass filters is well matched to the transmission line characteristic impedance. Each of the four loss branches of the attenuator includes a power resistor and a PIN diode. The attenuator is made electronically variable by controlling the dc bias across the PIN diodes, which respond to increased voltage by exhibiting lowered resistance. At any setting of the dc bias, only a fraction of the attenuated RF power is dissipated by the diodes. When the bias voltage is tuned for high attenuation, virtually all of the power is dissipated by the power resistors.

REFERENCES:
patent: 3119080 (1964-01-01), Watters
patent: 3577103 (1971-05-01), Sparks
patent: 3775708 (1973-11-01), Sly
patent: 3859609 (1975-01-01), Couvillon et al.
patent: 4010430 (1977-03-01), Wolfe
patent: 4097827 (1978-06-01), Williams
patent: 4236126 (1980-11-01), Weller et al.

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