High power light-emitting diode package comprising substrate...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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Details

C257S081000, C257S082000, C257S433000, C257S434000, C257S680000, C257SE23080, C257SE23101, C257SE23102, C257SE33056, C257SE33058, C257SE33075

Reexamination Certificate

active

07612385

ABSTRACT:
Disclosed herein is a package structure including at least one high power light-emitting diode to exhibit excellent heat release properties. In the package structure, a light-emitting diode chip which generates heat is directly attached to a beacon processed to protrude from part of a heat spreader having high heat conductivity, whereby an electrical wiring portion is separated from a heat release portion, thus maximizing heat release properties and realizing high luminance and reliability. The package structure is composed of a beacon formed on a metal or non-metal substrate having high heat conductivity to mount a high power light-emitting diode chip, to increase heat release properties; a wiring portion provided on the same line as the diode to input and output power and signals; and a reflection cup having a cavity, which may be inserted into or attached to the heat spreader or the wiring substrate, including a low temperature co-fired ceramic substrate, a high temperature co-fired ceramic substrate, or a printed circuit board.

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