Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2009-08-27
2010-12-07
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S116000, C438S126000, C257SE21502
Reexamination Certificate
active
07846754
ABSTRACT:
A high power Light Emitting Diode (LED) package and a method of producing the same. The high power LED package according to the present invention includes a plurality of light emitting diode chips, a first lead frame with the light emitting diode chips mounted thereon, and a second lead frame disposed at a predetermined interval from the first lead frame. The LED package also includes a package body fixing the first and second lead frames and bonding wires for electrically connecting the plurality of LED chips with upward-inclined inner side walls thereof and a second reflecting part surrounding the entire plurality of LED chips with an upward-inclined inner side wall thereof.
REFERENCES:
patent: 6858879 (2005-02-01), Waitl et al.
patent: 7166873 (2007-01-01), Okazaki
patent: 7445354 (2008-11-01), Aoki et al.
patent: 7696590 (2010-04-01), Waitl et al.
patent: 7705435 (2010-04-01), Shih
patent: 7717589 (2010-05-01), Nishioka et al.
patent: 2004/0084681 (2004-05-01), Roberts
patent: 2006/0065957 (2006-03-01), Hanya
patent: 2007/0097683 (2007-05-01), Chikugawa
patent: 2008/0023721 (2008-01-01), Lee et al.
patent: 2009/0003003 (2009-01-01), Park
patent: 2009/0065799 (2009-03-01), Kim et al.
patent: 2009/0121253 (2009-05-01), Abe
patent: 2009/0321918 (2009-12-01), Lin et al.
patent: 2010/0112735 (2010-05-01), Lee et al.
patent: 2010/0155771 (2010-06-01), Bando
patent: 2006-93435 (2006-04-01), None
patent: 10-2005-0111298 (2005-11-01), None
Korean Office Action, issued in corresponding Korean Patent Application No. KR 10-2006-0064439, dated on Jul. 26, 2007.
Baek Jong Hwan
Choi Seung Hwan
Oh Kyung Seob
Park Jung Kyu
Roh Jae Ky
McDermott Will & Emery LLP
Ngo Ngan
Samsung LED Co., Ltd.
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