Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-06-13
2009-10-06
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S098000, C257S099000, C257S100000, C257SE33056, C257SE33057, C257SE33058, C257SE33059, C257SE33068, C257SE33070, C257SE33072
Reexamination Certificate
active
07598528
ABSTRACT:
A high power Light Emitting Diode (LED) package and a method of producing the same. The high power LED package according to the present invention includes a plurality of light emitting diode chips, a first lead frame with the light emitting diode chips mounted thereon, and a second lead frame disposed at a predetermined interval from the first lead frame. The LED package also includes a package body fixing the first and second lead frames and bonding wires for electrically connecting the plurality of LED chips. The package body includes at least one first reflecting part separately surrounding each of the plurality of LED chips with upward-inclined inner side walls thereof and a second reflecting part surrounding the entire plurality of LED chips with an upward-inclined inner side wall thereof.
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Korean Office Action, issued in corresponding Korean Patent Application No. KR 10-2006-0064439, dated on Jul. 26, 2007.
Baek Jong Hwan
Choi Seung Hwan
Oh Kyung Seob
Park Jung Kyu
Roh Jae Ky
McDermott Will & Emery LLP
Ngo Ngan
Samsung Electro-Mechanics Co. Ltd.
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