High power light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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Details

C257S085000, C257S091000, C257S094000, C257S099000, C257S100000

Reexamination Certificate

active

07429755

ABSTRACT:
A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semiconductor layer and substrate. At least one N-type electrode is connected to the N-type semiconductor layer and is exposed to an opening of the active layer and P-type semiconductor layer. The N-type electrode with a centralized pattern is formed on the middle of the LED. Furthermore, at least one P-type electrode is coupled to the P-type semiconductor layer. The P-type electrode is arranged like a closed ring or an open ring surrounding the N-type electrode. Therefore, the distribution of current paths is dispersed, and illumination areas are simultaneously uniform.

REFERENCES:
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6445007 (2002-09-01), Wu et al.
patent: 7154124 (2006-12-01), Han et al.
patent: 2004/0222434 (2004-11-01), Uemura et al.
patent: 2005/0133807 (2005-06-01), Park et al.
patent: 2005/0224823 (2005-10-01), Zhao et al.

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