Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With housing or external electrode
Reexamination Certificate
2006-04-25
2006-04-25
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With housing or external electrode
C257S131000, C257S133000, C257S146000, C257S150000, C257S155000, C257S360000, C318S762000, C318S764000, C363S152000, C363S163000
Reexamination Certificate
active
07034345
ABSTRACT:
A novel architecture of high-power four-quadrant hybrid power modules based on high-current trench gate IGBTs and arrays of low-current wide-bandgap diodes is conceived. The distributed physical layout of high power density wide-bandgap devices improves the cooling inside a fully-sealed module case, thus avoiding excessive internal heat flux build up and high PN junction temperature, and benefiting the converter's reliability and efficiency. The design of multiple-in-one hybrid integrated AC-switch module at high power ratings is enabled by using hybrid AC switch cells and aluminum nitride substrate structure.
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Chang Jie
Jing Xiukuan
Wang Anhua
Zhang Jiajia
Erdem Fazli
Flynn Nathan J.
The Boeing Company
Thompson & Coburn LLP
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