High power InGaAsP/InP semiconductor laser with low-doped active

Details High power InGaAsP/InP semiconductor laser with low-doped active High power InGaAsP/InP semiconductor laser with low-doped active

1985-09-23

1987-07-07

Wan, Gene

Coherent light generators

Particular active media

Semiconductor

372 48, H01S 319

Patent

active

046791990

ABSTRACT:
In conventional InGaAsP/InP semiconductor lasers the p-doping in the InP laser level cannot be increased above 1.times.10.sup.18 atoms/cm.sup.3 without adversely affecting the optical characteristics of the devices. However, by introducing a thin low-doped p-InP layer and a thicker highly doped InP layer, good optical characteristics can be maintained and series resistance can be reduced by a factor of 2 to 4, thereby resulting in operable devices having significantly increased operating currents and higher output power than those of the prior art.

REFERENCES:
patent: 4445218 (1984-04-01), Coldren
Mito et al., InGaAsP Double Channel Planar Buried-Heterostructure Laser Diode (DC-PBH LD) with Effective Current Confinement, IEEE, Mar. 1983, Jour. of Lightwave Tech., vol. LT 1, No. 1.

Affiliated with

Also associated with

Rating

High power InGaAsP/InP semiconductor laser with low-doped active does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High power InGaAsP/InP semiconductor laser with low-doped active, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power InGaAsP/InP semiconductor laser with low-doped active will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1666969