High-power III-V semiconductor device

Details High-power III-V semiconductor device High-power III-V semiconductor device

1981-09-14

1985-02-05

Edlow, Martin H.

357 15, H01L 2980

Patent

active

044980930

ABSTRACT:
III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.

REFERENCES:
patent: 3986196 (1976-10-01), Decker
patent: 4112455 (1978-09-01), Seliger et al.
patent: 4196439 (1980-04-01), Mehaus et al.
S. M. Sze, "Physics of Semiconductor Devices", Wiley-Interscience, p. 411, 1969.
Fukuta, et al., "Power GaAs MESFET with a High Drain-Source Breakdown Voltage", IEEE Trans. on Micro Wave Theory and Techniques, vol. MTT-24, No. 6, pp. 312-317, Jun. 1976.
Frensley et al., "Effect of Gate Stripe Width on the Gain of GaAs MESFETS", Proceeding, 7th Biennial Cornell Electrical Engineering Conf., 1979, pp. 445-452.
Higashisaka et al., "A High Power GaAs MESFET with Experimentally Optimized Pattern", IEEE Trans. Electron Dev., vol. ED-27, No. 6, pp. 1025-1029, Jun. 1980.
A. G. Milnes, "Semiconductor Devices and Integrated Electronic"Van Nostrand Reinhold Co., pp. 349-350, (1980).
H. Statz, "Fabricating Field Effect Transistors", IBM Tech. Discl. Bull., vol. 11, No. 4, p. 397, Sep. 1968.

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