Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1991-06-14
1993-12-14
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257280, 257284, 257287, 257472, 437100, H01L 2948, H01L 2980, H01L 29161, H01L 2120
Patent
active
052705544
ABSTRACT:
A high power, high frequency, metal-semiconductor field-effect transistor comprises a bulk single crystal silicon carbide substrate, an optional first epitaxial layer of p-type conductivity silicon carbide formed upon the substrate, and a second epitaxial layer of n-type conductivity silicon carbide formed upon the first epitaxial layer. The second epitaxial layer has two separate well regions therein that are respectively defined by higher carrier concentrations of n-type dopant ions than are present in the remainder of the second epitaxial layer. Ohmic contacts are positioned upon the wells for respectively defining one of the well regions as the source and the other as the drain. A Schottky metal contact is positioned upon a portion of the second epitaxial layer that is between the ohmic contacts and thereby between the source and drain for forming an active channel in the second epitaxial layer when a bias is applied to the Schottky contact.
REFERENCES:
patent: 4732871 (1988-03-01), Buchmann et al.
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
patent: 4897710 (1990-01-01), Suzuki et al.
Journal of Applied Physics, vol. 64 #4, pp. 2168-2177 by Palmour et al. Aug. 15, 1988.
Kong et al.; Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type .beta.-SiC grown via chemical vapor deposition; Appl. Phys. Lett. 51(6), Aug. 10, 1987.
Cree Research Inc.
Prenty Mark V.
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