High power, high frequency bipolar transistor with alloyed gold

Details High power, high frequency bipolar transistor with alloyed gold High power, high frequency bipolar transistor with alloyed gold

1974-08-14

1976-01-27

Edlow, Martin H.

357 36, 357 63, H01L 2972, H01L 29167, H01L 29207, H01L 29227

Patent

active

039355870

ABSTRACT:
A bipolar transistor is provided with both high voltage and high frequency capabilities. A semiconductor body of a resistivity between 10 and 100 ohm-cm forms the collector region of the transistor and has an epitaxial semiconductor layer grown on a major surface thereof of a resistivity between about 0.5 and 10 ohm-cm and of a thickness between about 20 and 100 microns and of a conductivity type opposite from the body. At least one emitter region and integral emitter electrode are alloyed into the epitaxial layer preferably in annular rings. A base region is formed in the epitaxial layer between the emitter and semiconductor body and around the emitter region, said base region having a minimum thickness between the emitter region and the semiconductor body in the interior of the body of less than 20 and preferably between 5 and 10 microns. Base electrodes are alloyed into the epitaxial layer preferably spaced from the emitter region and emitter electrode preferably in concentric annular rings and a center circular member.

REFERENCES:
patent: 2858489 (1958-10-01), Henkels
patent: 2924760 (1960-02-01), Herlet
patent: 2936410 (1960-05-01), Emeis et al.
patent: 2946709 (1960-07-01), Herlet
patent: 3460009 (1969-08-01), Kisinko et al.
patent: 3872494 (1975-03-01), Davis et al.

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