Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Patent
1996-09-12
1999-01-05
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
H01L 310328
Patent
active
058566848
ABSTRACT:
A high power heterojunction field effect transistor comprising a first barrier layer including a semiconductor material having a band gap, a second barrier layer including a semiconductor material having a band gap, a channel layer including a semiconductor material having a band gap narrower than the band gaps of the material included in the first barrier layer and the second barrier layer and sandwiched therebetween and an interface layer sandwiched between the channel layer and the first barrier layer.
REFERENCES:
patent: 5206527 (1993-04-01), Kuwada
patent: 5331410 (1994-07-01), Kuwada
patent: 5453631 (1995-09-01), Onda et al.
Eisenbeiser Kurt
Hashemi Majid M.
Huang Jenn-Hwa
Wang Yang
Hardy David B.
Koch William E.
Motorola Inc.
Parsons Eugene A.
LandOfFree
High power HFET with improved channel interfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High power HFET with improved channel interfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High power HFET with improved channel interfaces will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-865142