High-power GTO thyristor and also a method for its manufacture

Details High-power GTO thyristor and also a method for its manufacture High-power GTO thyristor and also a method for its manufacture

1989-02-10

1990-10-02

Hille, Rolf

357 39, H01L 2974

Patent

active

049610996

ABSTRACT:
In a high-power GTO thyristor with anode short-circuits (7) in the anode-side p-type emitter layer (6), the triggering sensitivity is improved by an additional thin and lightly doped p.sup.- -type barrier layer (9) between the anode short-circuits (7) and the n-type base layer (5) without the turn-off process being negatively affected.

REFERENCES:
patent: 4641187 (1987-03-01), Sugimoto et al.
patent: 4673961 (1987-06-01), Nishizawa et al.
patent: 4742377 (1988-05-01), Einthoven
Patent Abstracts of Japan, vol. 7, No. 58, (E-163)(1203), Mar. 10, 1983.
Patent Abstracts of Japan, vol. 7, No. 115, (E-176)(1260), May 19, 1983.
IEEE Transactions on Electron Devices, vol. ED-31, No. 12, Dec. 1984, IEEE (N.Y., U.S.A.) T. Yatsuo et al.

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