High power gallium arsenide schottky barrier field effect transi

Details High power gallium arsenide schottky barrier field effect transi High power gallium arsenide schottky barrier field effect transi

1976-10-29

1978-08-01

James, Andrew J.

357 15, 357 68, 357 71, H01L 2980, H01L 2948, H01L 2956

Patent

active

041046722

ABSTRACT:
An integrated high-power gallium arsenide field-effect-transistor device for operation in the gigahertz range comprises a multiple-gate structure. The device, which features gate cross-under fingers, is fabricated in microminiature form by directly processing a wafer using electron-beam lithographic techniques.

REFERENCES:
patent: 3737743 (1973-06-01), Goronkin et al.
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3855613 (1974-12-01), Napoli et al.
patent: 3969745 (1976-07-01), Blocker
patent: 3988619 (1976-10-01), Malaviva et al.
patent: 4015278 (1977-03-01), Fukuta
patent: 4016643 (1977-04-01), Pucel et al.
GaAs Microwave Power FET; by Fukuta et al., IEEE Transaction, vol. Ed. 23, No. 4, Apr., 1976, pp. 388-394.

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