High-power-gain, bipolar transistor amplifier

Details High-power-gain, bipolar transistor amplifier High-power-gain, bipolar transistor amplifier

2011-03-08

2011-03-08

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

C257S591000, C257S574000, C257SE29040, C257SE29256, C257SE29270

Reexamination Certificate

active

07902635

ABSTRACT:
Improved radio frequency gain in a silicon-based bipolar transistor may be provided by adoption of a common-base configuration, preferably together with excess doping of the base to provide extremely low base resistances boosting performance over similar common-emitter designs.

REFERENCES:
patent: 5304816 (1994-04-01), Grinberg et al.
patent: 5329144 (1994-07-01), Luryi
patent: 2003/0048138 (2003-03-01), Van De Westerlo et al.
patent: 2005/0139921 (2005-06-01), Kang et al.
N.L. Wang, et al., Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz, IEEE Transactions on Microwave Theory and Techniques, vol. 38, No. 10, Oct. 1990.

Affiliated with

Also associated with

Rating

High-power-gain, bipolar transistor amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-power-gain, bipolar transistor amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-power-gain, bipolar transistor amplifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761698