High power frequency semiconductor device with improved thermal

Details High power frequency semiconductor device with improved thermal High power frequency semiconductor device with improved thermal

1990-07-03

1991-03-26

Hille, Rolf

357 36, 357 38, 357 86, 357 20, H01L 29747, H01L 2972, H01L 2974, H01L 2906

Patent

active

050033700

ABSTRACT:
A high frequency and high power semiconductor device comprising unit cells of the same shape, connected in parallel and fabricated on a chip. The thermal resistance of the chip is reduced by arranging the unit cells in a zigzag pattern. The zigzag arrangement of the unit cells is such that each unit cell in a line is offset by approximately one-half pitch from the unit cells in neighboring lines. As a result of the zigzag arrangement of the unit cells, the temperature of each unit cell is less influenced by heat from the unit cells in neighboring lines than are unit cells in an orthogonal matrix. In addition, the thermal distribution of the unit cells is improved to prevent hot spots. Using the zigzag arrangement, a single transistor can output over 100 watts C.W. at more than 900 MHz.

REFERENCES:
patent: 2929006 (1960-03-01), Herlet
patent: 3252063 (1966-05-01), Ziffer
patent: 3582723 (1971-06-01), Kerr
patent: 3783349 (1974-01-01), Beasom
patent: 3878550 (1975-04-01), Benjamin
patent: 4441116 (1984-04-01), Widcar
patent: 4618781 (1986-10-01), Silber et al.
International Rectifier Hexfet Databook, pp. 1, 6, .RTM. 1981 Int. Rect. El Segundo, Calif.
Electronic Engineering, "Siliconix Undercuts Power Mosfet Ind," Feb. 1983, p. 15.
6029 Electronic Engineering, vol. 55, (1983), No. 674, London, Great Britain, p. 15, "Siliconix Undercuts Power MOSFET Industry".
Proceedings of the IEEE, Apr. 1968, pp. 742-744, "Mesh Emitter Transistor".
International Electron Devices Meeting 1983, Washington, D.C., Dec. 5-6-7, "A 900 MHz 100 W CW Mesh Emitter Type Transistor with P.H.S. Structure", pp. 225-228.
European Search Report, The Hague, 12/15/86, Examiner: D.L.D. Morvan.
K. Ishii et al., IEDM Technical Digest, "A 900 W CW Mesh Emitter Type Transistor with P.H.S. Structure," 1983, pp. 225-228.

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