High-power field-effect transistor and method of making same

Details High-power field-effect transistor and method of making same High-power field-effect transistor and method of making same

1975-08-22

1977-01-25

Lynch, Michael J.

357 20, 357 55, 357 58, 357 68, H01L 2980

Patent

active

040054675

ABSTRACT:
A field-effect transistor designed for high-power operation has a P.sup.+ substrate, preferably of gallium arsenide, topped by an N layer which in turn is covered by a much thinner N.sup.+ film, the layer and film being bisected by a serpentine trench so as to form a pair of interdigitated comb-shaped N.sup.+ segments overlain by metallic deposits which constitute a source and a drain electrode. The trench, advantageously produced by ion bombardment which also has a passivating effect on the surface areas thus exposed, cuts deep enough into the N layer to leave a channel whose conductivity is controlled by a gate electrode substantially coextensive therewith on the opposite substrate face. The prismatic substrate body is peripherally bounded by a mesa flank which may be passivated by a deposit of low-melting glass.

REFERENCES:
patent: 3344324 (1967-09-01), Beale
patent: 3629667 (1971-12-01), Lubart et al.
patent: 3663873 (1972-05-01), Yagi
patent: 3701696 (1972-10-01), Mets

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