High power field effect transistor

Details High power field effect transistor High power field effect transistor

1980-07-01

1984-08-28

James, Andrew J.

357 22, 357 55, H01L 2978, H01L 2980, H01L 2906

Patent

active

044686838

ABSTRACT:
A field effect transistor comprises two semiconductor plates, discs or chips of the same type of conducitivity each with a structure of parallel ridges on one side, the two plates, discs or chips being assembled together under mechanical pressure with their structured sides facing and relatively rotated so that the ridges of one plate, disc or chips touch and cross the ridges of the other plate, disc or chip and form distribution of electrically parallel connected monocrystalline narrow path resistors, and a gate contact for each narrow path resistor. The invention also includes a method of making such a transistor.

REFERENCES:
patent: 2728034 (1955-12-01), Kurshan
patent: 2930950 (1960-03-01), Teszner
patent: 3274461 (1966-09-01), Teszner
patent: 3363153 (1968-01-01), Zloczower
patent: 3488835 (1970-01-01), Becke et al.
patent: 3509432 (1970-04-01), Aponick, Jr. et al.
patent: 3584268 (1971-06-01), Schmidlin
patent: 3925803 (1975-12-01), Kobayashi
patent: 3999281 (1976-12-01), Goronkin et al.
patent: 4115793 (1978-09-01), Nishizawa
S. Schaefer, "Herstellung von P-N-Ueberganengen Durch Gemeinsame Plastisch Verformung von P- und N-Dotiertem Germanium", Solid-State Electronics, vol. 11, (1968) pp. 675-681.

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