High power field effect transistor

Details High power field effect transistor High power field effect transistor

1974-09-16

1978-05-30

Larkins, William D.

357 15, 357 55, 357 56, 357 91, H01L 2978, H01L 2948, H01L 2906

Patent

active

040926605

ABSTRACT:
A field effect transistor is provided wherein conductive mesas are topped by source and drain electrodes, respectively, and rise out of a semiconductor epitaxial layer onto which there is formed a Schottky barrier layer. A heat sink metal layer backs the barrier layer and forms a gate terminal for control of flow of current between the source and drain electrodes via the epitaxial layer adjacent to the barrier.

REFERENCES:
patent: 2985805 (1961-05-01), Nelson
patent: 2993998 (1961-07-01), Lehovec
patent: 3675313 (1972-07-01), Driver et al.
patent: 3775200 (1973-11-01), Nobel et al.
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3855690 (1974-12-01), Kim et al.

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